Semiconductor switching circuit device and manufacturing...

Details Semiconductor switching circuit device and manufacturing... Semiconductor switching circuit device and manufacturing...

2005-02-08

2005-02-08

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For high frequency device

C257S393000, C257S183000, C257S187000, C333S262000, C200S181000

Reexamination Certificate

active

06853072

ABSTRACT:
Posts are disposed at the surroundings of an FET and a shield metal supported by the posts is placed above the FET to create a void between the FET and the shield metal. Since the separation between the FET and the shield metal is small, the resin does not enter the void. A resin layer cover the shield metal. The shield metal is connected to an electrode pad that receives a DC control signal. Although high frequency signals that are applied to the FET may leak between the source and drain electrodes of the FET through the resin layer covering the FET even when the FET is switched off, the void and the shield metal prevent such signal leakage.

REFERENCES:
patent: 6258606 (2001-07-01), Kovacs
patent: 6472962 (2002-10-01), Guo et al.
patent: 6531668 (2003-03-01), Ma
patent: 6657266 (2003-12-01), Hirai et al.

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