Semiconductor switching circuit

Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Utilizing three or more electrode solid-state device

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327543, H03K 17687

Patent

active

054061512

ABSTRACT:
A semiconductor switching circuit for operation at low battery voltages as in, for example, battery powered telephone devices. The semiconductor switching circuit includes first and second field effect transistors. Three power supplies are provided. The first power supply outputs a voltage V.sub.o. The second power supply outputs a voltage which is no lower than the sum of V.sub.o and the built in voltage of the field effect transistors. The third power outputs a voltage which is not higher than the sum of V.sub.o and the pinchoff voltage of the field effect transistors. The source of the first field effect transistor serves as the circuits input while its drain serves as the circuit's output. This output is connected to the drain of the second transistor. The first power supply provides bias to the first and second field effect transistors. This arrangement provides low input loss and high isolation.

REFERENCES:
patent: 4837530 (1989-06-01), Kondoh
patent: 5066873 (1991-11-01), Chan
patent: 5128556 (1992-07-01), Hirakata
An X-Band Transmit-Receive Switch Using Fets Connected In Series And Shunt, Matsunaga et al., Mitsubishi Electric Corp., MW87-65, pp. 1-4, '92 7.9.

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