Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Having only two terminals and no control electrode – e.g.,...
Reexamination Certificate
2006-11-14
2006-11-14
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Having only two terminals and no control electrode , e.g.,...
C257S151000, C257S152000, C257S153000, C257S259000, C257S662000, C257S663000, C333S101000, C333S262000
Reexamination Certificate
active
07135717
ABSTRACT:
The purpose of the present invention is to provide a small-sized switch attaining high isolation of not less than 80 dB, maintaining low insertion loss also in high frequencies not less than 60 GHz. A semiconductor switch according to the present invention utilizes FETs a gate electrode, a source electrode, and a drain electrode of each of which are formed on a semiconductor. The source electrode and the drain electrode are connected with the earth as well as are disposed in parallel to each other, and the gate electrode is formed between the source electrode and the drain electrode, and both the ends of the gate electrode are connected to the first input-output terminal1and the second input-output terminal.
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Lee Eugene
Muirhead and Saturnelli LLC
Nec Electronics Corporation
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