Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Utilizing three or more electrode solid-state device
Reexamination Certificate
2007-11-16
2010-06-22
Donovan, Lincoln (Department: 2816)
Miscellaneous active electrical nonlinear devices, circuits, and
Gating
Utilizing three or more electrode solid-state device
C327S423000, C327S429000, C327S536000
Reexamination Certificate
active
07741895
ABSTRACT:
A semiconductor switch circuit is provided that enables current consumption to be reduced even in a conduction state. A semiconductor switch circuit100has P-type MOS transistors Q101and Q102for conduction that share a source and are connected in series between an input/output terminal101and input/output terminal102, a P-type MOS transistor Q103and N-type MOS transistor Q105having drains connected to the gate of Q101, a P-type MOS transistor Q104and N-type MOS transistor Q106having drains connected to the gate of Q102, and a control terminal103connected to the gates of the transistors. Further semiconductor switch circuit100is configured with the sources and back gates of Q103and Q104connected to the sources of Q101and Q102. Therefore, it is possible to switch the path between input/output terminal101and input/output terminal102between a conduction state and non-conduction state by means of voltage control by voltage value Vcont of a control signal applied to control terminal103.
REFERENCES:
patent: 2004/0174203 (2004-09-01), Wodnicki
patent: 2005/0264341 (2005-12-01), Hikita et al.
patent: 63227215 (1988-09-01), None
patent: 200077963 (2000-03-01), None
patent: 2000341144 (2000-12-01), None
English language Abstract of JP 2000-77963.
English language Abstract of JP 2000-341144.
English language Abstract of JP 63-227215.
Inagaki Kiyotaka
Kihara Hideyuki
Ukai Tomohiro
Donovan Lincoln
Greenblum & Bernstein P.L.C.
Panasonic Corporation
Poos John W
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