Semiconductor switch

Details Semiconductor switch Semiconductor switch

1979-10-05

1982-02-09

Mullins, James B.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307305, H03K 1772

Patent

active

043151680

ABSTRACT:
A PNPN switch has a transistor for protecting the switch from the dv/dt effect, which is so connected as to shortcircuit one outermost PN junction PN of the switch. The transistor is driven by a drive circuit and not through the outer outermost PN junction of the switch by a drive circuit. The drive circuit is so designed that, in a transient mode, it operates as a transistor element and a capacitive element and, in a DC mode, it operates solely as a capacitive element. To this end, a transistor is used as the drive circuit. A level shift element is connected in series with the emitter-base junction of the drive transistor. The series circuit of the level shift element and the emitter-base junction is connected across the other PN junction and the collector of the drive transistor is connected to the base of the dv/dt protective transistor.

REFERENCES:
patent: 4071779 (1978-01-01), Kawanami

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