Semiconductor switch

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307252D, 307252G, 307305, H03K 1772

Patent

active

041840860

ABSTRACT:
A semiconductor switch comprising a PNPN switch which has a four-layered PNPN structure with at least three PN-junctions, switching means for electrically short-circuiting a path between a P-type base and an N-type emitter of the PNPN switch when a transient voltage is applied between a P-type emitter and the N-type emitter of the PNPN switch, and drive means for driving the switching means, the drive means driving the switching means so that the path between the P-type base and the N-type emitter may be electrically short-circuited for a fixed time even after termination of the transient state, whereby any improper ignition of the PNPN switch is prevented even after the termination of the transient state.

REFERENCES:
patent: 3609413 (1971-09-01), Lane et al.
patent: 4015143 (1977-03-01), Tokunaga et al.
patent: 4039865 (1977-08-01), Ohhinata et al.
patent: 4063115 (1977-12-01), Okuhara et al.

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