Semiconductor switch

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

Patent

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Details

307252J, 307305, H03K 1772

Patent

active

040631150

ABSTRACT:
A semiconductor switch assuring the easy formation of a semiconductor integrated circuit and having high control sensitivity while maintaining high dv/dt - immunity, which comprises a PNPN switch of an equivalently four-layered structure including at least three PN-junctions, an anode and a cathode, switching means including a control terminal and connected with the PNPN switch to shunt one of the three PN-junctions at either one end of the PNPN switch, amplifying means, and a capacitive element for differentiating a voltage applied between the anode and the cathode of the PNPN switch to allow a current to flow into the control terminal of the switching means through the amplifying means, so that the switching means is driven by the current thereby to short-circuit the one of three PN-junctions.

REFERENCES:
patent: 3549905 (1970-12-01), Johnson

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