Semiconductor switch

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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Details

307252T, 307305, H03K 1772

Patent

active

043026877

ABSTRACT:
A semiconductor (preferably a thyristor) switch has characteristics that can be represented by an equivalent circuit including an interconnected pair of opposite conductive types of transistors. The base terminals of these transistors represent anode and cathode gate electrodes of the thyristors. An amplifier which is free from erroneous actions due to the impression of a transitional voltage is connected to an electrode of the thyristor, which corresponds to the base terminal of an equivalent transistor of a first conductive type, in order to supply a gate current. A resistor across the base-emitter junction of an equivalent transistor of a second conductive type has a sufficiently low-resistance value to satisfy a predetermined dv/dt-bearing capacity. Therefore, a sustaining gate current is provided responsive to an amplification of the input to the amplifying means.

REFERENCES:
patent: 3932769 (1976-01-01), Pollmeier
patent: 3959668 (1976-05-01), Ohhinata et al.
patent: 4015143 (1977-03-01), Tokunaga et al.
patent: 4039864 (1977-08-01), Tokunaga et al.

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