Semiconductor switch

Details Semiconductor switch Semiconductor switch

1980-07-18

1983-07-05

Zazworsky, John

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307252J, 307305, 357 20, 357 35, 357 38, 357 39, H03K 1772, H03K 1716

Patent

active

043920691

ABSTRACT:
In semiconductor switches, erroneous firing is often a serious problem. To overcome this, a semiconductor switch is provided which includes a thyristor of PNPN structure with three PN junctions and with anode, cathode and gate electrodes, a first transistor for short-circuiting at least one PN junction of said thyristor upon its saturation, and a second transistor provided between the anode side or cathode side of the thyristor and the base of said first transistor to cause saturation of the first transistor in accordance with the voltage which is applied to the anode or cathode of the thyristor. The ratio of the time constant of the second transistor to that of said thyristor is not substantially less than 0.5. This ratio is established by using similar plane diffused patterns for the second transistor and a third transistor which is defined by three continuous layers of the thyristor.

REFERENCES:
patent: 3609413 (1971-09-01), Lane et al.
patent: 4015143 (1977-03-01), Tokunaga et al.
patent: 4063115 (1977-12-01), Okuhara et al.
patent: 4184086 (1980-01-01), Sagawa et al.

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