Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity
Patent
1992-09-17
1994-10-04
Sikes, William L.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Tunneling through region of reduced conductivity
257110, 257111, 257112, 257173, H01F 2908, H01F 2910
Patent
active
053529057
ABSTRACT:
A thyristor type surge suppressor includes a P-type semiconductor substrate, an N-type first semiconductor layer provided in one surface of the semiconductor substrate, an N-type second semiconductor layer provided in the other surface of the semiconductor substrate, a P-type third semiconductor layer formed in the N-type first semiconductor layer so as to provide a plurality of first exposed regions of the N-type first semiconductor layer, a P-type fourth first semiconductor layer formed in the N-type second semiconductor layer so as to provide a plurality of second exposed regions of the N-type second semiconductor layer, a first electrode provided over the P-type third semiconductor layer and the of N-type first exposed regions, and a second electrode provided over the P-type fourth semiconductor layer and the N-type second exposed regions. In such a structure, the N-type first and second exposed regions are disposed so as to be opposed to the P-type fourth semiconductor layer and the P-type third semiconductor layer, respectively.
REFERENCES:
patent: 3391310 (1968-06-01), Gentry
patent: 3907615 (1975-09-01), Weijland
patent: 4282555 (1981-08-01), Svedberg
patent: 4644437 (1987-02-01), Robe
patent: 4905119 (1990-02-01), Webb
patent: 4967256 (1990-10-01), Pathak et al.
Abraham Fetsum
Shindengen Electric Manufacturing Co. Ltd.
Sikes William L.
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