Semiconductor surface-field emitter for T-ray generation

Details Semiconductor surface-field emitter for T-ray generation Semiconductor surface-field emitter for T-ray generation

2006-08-15

2006-08-15

Wells, Nikita (Department: 2881)

Radiant energy

Radiant energy generation and sources

With radiation modifying member

C250S493100

Reexamination Certificate

active

07091506

ABSTRACT:
An apparatus and a method for the generation of high-energy terahertz radiation. The apparatus and method function by impinging optical radiation on the surface of a semiconductor substrate, creating a photo-generated dipole emitting terahertz radiation. Because it is desirable to orient the dipole perpendicular to the radiation direction to maximize the power of the terahertz radiation, the surface of the semiconductor is modified to achieve this desirable result. More specifically, three embodiments of the surface modification are disclosed: (1) a grating is created in the top surface of a GaAs semiconductor substrate, (2) an InAs film is formed on a Teflon base to create a grating structure on the semiconductor substrate, and (3) a grating is disposed in the surface of the semiconductor substrate such that the optical radiation engages the substrate at Brewster's angle.

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