Semiconductor surface-emitting optical device having light emitt

Details Semiconductor surface-emitting optical device having light emitt Semiconductor surface-emitting optical device having light emitt

1996-03-04

1997-10-07

Davie, James W.

Coherent light generators

Particular resonant cavity

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257 13, 257 14, 372 45, H01S 319

Patent

active

056756054

ABSTRACT:
An active layer incorporated in a semiconductor surface-emitting optical device is formed of the ordered crystal of GaInP or AlGaInP so that unisotropical photoluminescent characteristics take place in the light generation, and the semiconductor surface-emitting optical device selectively oscillates at a plane of polarization.

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H. Fujii et al., "Observation of stripe-direction dependence of threshold current . . . layer", Appl. Phys. Lett., vol. 61, No. 7, Aug. 17, 1992, pp. 737-739.
G. Gomyo et al., "Evidence for the existence of an ordered state in Ga0.5In0.5P . . . energy", Appl. Phys. Lett., vol. 50. No. 11, Mar. 16, 1987, pp. 673-675.
J.A. Lott et al., "Electircally Injected Visible (639-661 nm) . . . Emitting Lasers", Electronic Letters, vol. 29, No. 10, May 13, 1993, pp. 830-832.
R.P. Schneider et al., "MOVPE growth of InAlGaP-based visible . . . surface-emitting lasers", Journal of Crystal Growth, vol. 124, 1992, pp. 763-771 (no month). lasers", Appl. Phys. Lett., vol. 62, No. 62, No. 6, Feb. 8, 1993, pp. 553-555.

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