Semiconductor surface acoustic wave device

Details Semiconductor surface acoustic wave device Semiconductor surface acoustic wave device

1981-03-16

1982-11-09

Nussbaum, Marvin L.

Wave transmission lines and networks

Coupling networks

Delay lines including elastic surface wave propagation means

310313A, 333195, 357 26, H03H 942, H03H 964, H01L 2102

Patent

active

043587453

ABSTRACT:
Surface acoustic wave devices with selectable performance parameters such as having a temperature coefficient of zero, may be fabricated employing a monocrystalline semiconductor substrate with a combination of appropriate doping and crystallographic orientation both with respect to the surface and the direction of propagation. Monocrystalline silicon doped with phosphorous to the order of 2.times.10.sup.19 atoms per cc, exhibits a zero temperature coefficient at 300.degree. Kelvin for acoustic waves propagating in the [110] crystallographic direction on a [110] substrate.

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