Semiconductor superlattice infrared source

Details Semiconductor superlattice infrared source Semiconductor superlattice infrared source

1990-08-16

1992-07-07

Jackson, Jr., Jerome

Coherent light generators

Particular component circuitry

Optical pumping

357 17, 372 43, 372 45, H01L 2712, H01L 4500, H01L 3300

Patent

active

051287285

ABSTRACT:
An infrared emitting semiconductor device having a layer-shaped infrared emitting region with a superlattice structure. The superlattice structure consists of thin alternating narrow and wide wells separated by thin barriers. The narrow well has one quasibound state E'.sub.0 while the wide well has two states E.sub.0 anad E.sub.1 with E'.sub.0 being located between E.sub.0 and E.sub.1. Under proper bias, an electron in state E.sub.0 can resonately tunnel out of the well through the quasibound state E'.sub.0 to the first excited state E.sub.1 of the next wide well. This electron can then relax to the ground state E.sub.0 where it can resonately tunnel to the next wide well and repeat the process. Infrared radiation with its photon energy equal to E.sub.1 -E.sub.0 is emitted as the electrons relax from E.sub.1 to E.sub.0 in the wide wells.

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Levine et al., "New 10 um Infrared Detetor using Intersubbard absorption in resonant tunneling GaAlAs superlattices", Appl. Phys. Let. 50 Apr. 1987 pp. 1092-1094.
Journal Applied Physics 63(8) 15 Apr 1988 pp. 2856 to 2858.

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