Semiconductor superlattice heterostructures on non-planar substr

Details Semiconductor superlattice heterostructures on non-planar substr Semiconductor superlattice heterostructures on non-planar substr

1990-08-28

1991-08-13

James, Andrew J.

Coherent light generators

Particular component circuitry

Optical pumping

357 16, 372 45, 372 46, 372 48, H01L 2712

Patent

active

050400320

ABSTRACT:
A novel quantum-well semiconductor is described wherein the quantum well is formed by growing a thin (.ltoreq.500 .ANG.) epitaxial layer on a patterned (e.g. grooved) non-planar substrate so as to achieve thickness variations along the quantum well and hence laterally varying superlattice periodicity and QW depth. Using this structure one can achieve lateral carrier confinement and real refractive index waveguiding. Index-guided GaAs/AlGaAs lasers are described.

REFERENCES:
patent: 4922500 (1990-05-01), Chang-Hasnain
patent: 4946802 (1990-08-01), Shima et al.
Tsang et al., "Growth of GaAs-Ga.sub.1-x Al.sub.x As Over Preferentially Etched Channels by Molecular Beam Epitaxy: A Technique for Two-Dimensional Thin-Film Definition", Mar. 1977, Applied Physics Letters, vol. 30, No. 6, pp. 293-296.
"Molecular Beam Epitaxy of GaAs/AlGaAs Superlattice Heterostructures on Nonplanar Substrates", E. Kapon et al., Appl. Phys. Lett., vol. 50, No. 6, pp. 347-349, Feb. 9, 1987.

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