Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2005-03-29
2005-03-29
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S347000, C257S349000, C257S354000, C117S043000
Reexamination Certificate
active
06872979
ABSTRACT:
A semiconductor substrate that prevents formation of particles from an edge part of the substrate. The substrate contains an on-substrate oxide film and an SOI layer stacked on the oxide film. A molten layer is formed on the edge part of the on-substrate oxide film and the SOI layer by mixing the SOI layer and the on-substrate oxide film to cover the edge part. An epitaxial layer may also be formed on the edge part of the on-substrate oxide film and the SOI layer to cover the edge part.
REFERENCES:
patent: 4576851 (1986-03-01), Iwamatsu
patent: 4725561 (1988-02-01), Haond et al.
patent: 4963505 (1990-10-01), Fujii et al.
patent: 5233218 (1993-08-01), Miura
patent: 5258323 (1993-11-01), Sarma et al.
patent: 5340435 (1994-08-01), Ito et al.
patent: 5494849 (1996-02-01), Iyer et al.
patent: 5691231 (1997-11-01), Kobayashi et al.
patent: 5719426 (1998-02-01), Iwamatsu et al.
patent: 5973365 (1999-10-01), Deleonibus
patent: 5982003 (1999-11-01), Hu et al.
patent: 6004406 (1999-12-01), Kobayashi et al.
patent: 6118152 (2000-09-01), Yamaguchi et al.
patent: 6294478 (2001-09-01), Sakaguchi et al.
patent: 1117206 (1996-02-01), None
patent: 756319 (1997-01-01), None
patent: 2 309 587 (1997-07-01), None
patent: 4-129267 (1992-04-01), None
patent: 8-195483 (1996-07-01), None
patent: 11067701 (1999-03-01), None
patent: 11111581 (1999-04-01), None
Hirano Yuuichi
Iwamatsu Toshiaki
Kimura Yasuhiro
Naruoka Hideki
Yamaguchi Yasuo
Dickey Thomas L
Flynn Nathan J.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Renesas Technology Corp.
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