Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Patent
1996-12-30
1998-12-01
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
257501, 257507, 257509, 257347, H01L 2701, H01L 2712, H01L 2900
Patent
active
058442944
ABSTRACT:
A semiconductor substrate which is optimum for a substrate for integrating a vertical power element and a control circuit element monolithically. A cavity 3 is formed between a dielectric layer 2 and a single crystal silicon substrate 4 in a control circuit element forming region 8, and junction planes 1a and 4a of single crystal silicon substrates 1 and 4 are joined together. Since bonding of regions where a vertical power element is formed is made with flat single crystal silicon planes, no void (non-bonded portion) is generated on the junction plane of the region where the vertical power element is formed. As a result, it is possible to realize a semiconductor device provided with perfect junction having electrical conductivity in a direction perpendicular to the junction interface.
REFERENCES:
patent: 4908328 (1990-03-01), Hu et al.
patent: 4963505 (1990-10-01), Fuji et al.
patent: 5444289 (1995-08-01), Cambou et al.
Arai Ken-ichi
Kikuchi Hiroaki
Fahmy Wael
NEC Corporation
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