Semiconductor substrate treating method, semiconductor...

Details Semiconductor substrate treating method, semiconductor... Semiconductor substrate treating method, semiconductor...

2011-01-25

2011-01-25

Deo, Duy-Vu N (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S753000, C438S756000

Reexamination Certificate

active

07875557

ABSTRACT:
A semiconductor substrate treating method is disclosed that can selectively remove contaminants or unnecessary substances present on the surface of a semiconductor substrate. Also disclosed are a semiconductor component of enhanced reliability produced by this method and an electronic appliance incorporating the semiconductor component. The semiconductor substrate treating method comprises the step of treating a semiconductor substrate with a treating fluid containing NH4OH and HF wherein the relationships 0.30≦X/Y≦0.78 and 0.03≦Y≦6.0 are satisfied, where X represents a concentration [mol/L] of NH4OH in the treating fluid and Y represents a concentration [mol/L] of HF in the treating fluid. Preferably, the treating fluid is substantially free from H2O2. The semiconductor substrate has a surface, at least a part of which is composed of high melting point metal.

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Ritsuo Takizawa, et al., “Clean Silicon Wafer Surface by a Slight Etch Method”, Extended Abstracts of the 20th(1988 International) Conference on Solid State Devices and Materials, pp. 475-478 (1988).

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