Semiconductor substrate surface preparation method

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates

Reexamination Certificate

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Details

C438S009000, C438S311000, C438S474000, C438S475000, C257SE21088, C257SE21122, C257SE21218, C257SE21567

Reexamination Certificate

active

08062957

ABSTRACT:
The invention relates to a method for preparing a surface of a semiconductor substrate by oxidizing the surface of the semiconductor substrate to thereby transform the natural oxide into an artificial oxide and then removing the artificial oxide, in particular to obtain an oxide-free substrate surface.

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