Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including high voltage or high power devices isolated from...
Patent
1994-07-07
1995-10-24
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including high voltage or high power devices isolated from...
257506, 257526, H01L 2712, H01L 2702
Patent
active
054612535
ABSTRACT:
A semiconductor circuit structure including a semiconductor substrate portion and at least one region provided on one main surface thereof insulatedly isolated from other regions provided on the same surface, by burying means made of an oxide film, the burying means including a bottom flat portion and at least one side wall portion provided at least in the vicinity of an edge portion of and integrally formed with the bottom flat portion, thereby a semiconductor circuit structure provided with a plurality of insulatedly isolated regions on a main surface thereof and having a high withstand voltage can be obtained in a short production process.
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Akio Nakagawa, et al. "High Voltage, New Driver IC Technique Based on Silicon Wafer Direct-Bonding (SDB)" PESC '88 Record (Apr., 1988) pp. 1325-1329.
Yu Ohata and Takao Izumita, "Dielectrically Isolated Intelligent Power Switch", IEEE 1987 Custom Integrated Circuits Conference, pp. 443-445.
Hattori Tadashi
Huzino Seizi
Katada Mitutaka
Tsuruta Kazuhiro
Yamaoka Masami
Crane Sara W.
Monin, Jr. Donald L.
Nippon Steel Inc.
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