Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-07-28
2008-03-18
Weiss, Howard (Department: 2814)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S751000, C438S494000, C257SE21214
Reexamination Certificate
active
07344997
ABSTRACT:
A semiconductor substrate comprising a semiconductor base, a dielectric layer formed in at least a part of an area on the semiconductor base, and a single crystal semiconductor layers having mutually different film thicknesses, disposed on the dielectric layer and formed by epitaxial growth.
REFERENCES:
patent: 5114876 (1992-05-01), Weiner
patent: 07-225410 (1995-08-01), None
patent: 2003-158091 (2003-05-01), None
Edwards Angell Palmer & & Dodge LLP
Penny, Jr. John J.
Seiko Epson Corporation
Trinh (Vikki) Hoa B
Weiss Howard
LandOfFree
Semiconductor substrate, semiconductor device, method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor substrate, semiconductor device, method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor substrate, semiconductor device, method for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3975153