Semiconductor substrate, semiconductor device, light...

Details Semiconductor substrate, semiconductor device, light... Semiconductor substrate, semiconductor device, light...

2004-04-30

2009-11-24

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C257SE21570, C438S409000, C438S455000

Reexamination Certificate

active

07622363

ABSTRACT:
A semiconductor substrate including a gallium arsenide layer is obtained by executing a step of preparing a first substrate having a separating layer constituted of germanium and a gallium arsenide layer on the separating layer, a step of preparing a bonded substrate by bonding the first substrate and a second substrate, and a step of dividing the bonded substrate at a portion of the separating layer.

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Search Report dated Mar. 25, 2009 in European Application No. 04730716.0.

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