Semiconductor substrate, semiconductor device and method of manu

Details Semiconductor substrate, semiconductor device and method of manu Semiconductor substrate, semiconductor device and method of manu

1998-04-08

2000-05-30

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257 86, 257189, 257442, 257465, 257622, 438 81, H01L 3100, H01L 3112, H01L 3106, H01L 2906

Patent

active

060693940

ABSTRACT:
A sapphire substrate, a buffer layer of undoped GaN and a compound semiconductor crystal layer successively formed on the sapphire substrate together form a substrate of a light emitting diode. A first cladding layer of n-type GaN, an active layer of undoped In.sub.0.2 Ga.sub.0.8 N and a second cladding layer successively formed on the compound semiconductor crystal layer together form a device structure of the light emitting diode. On the second cladding layer, a p-type electrode is formed, and on the first cladding layer, an n-type electrode is formed. In a part of the sapphire substrate opposing the p-type electrode, a recess having a trapezoidal section is formed, so that the thickness of an upper portion of the sapphire substrate above the recess can be substantially equal to or smaller than the thickness of the compound semiconductor crystal layer.

REFERENCES:
patent: 5034954 (1991-07-01), Seiwa
patent: 5038356 (1991-08-01), Botez et al.
patent: 5587593 (1996-12-01), Koide et al.
patent: 5767581 (1998-06-01), Nakamura et al.
patent: 5838029 (1998-11-01), Shakuda
patent: 5852322 (1998-12-01), Speckbacher

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