Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1999-07-08
2000-05-02
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 62, 257 50, 257 51, 257 66, 257 72, 257 49, H01L 2904
Patent
active
060575573
ABSTRACT:
A method of forming an Si film by a bias sputtering process comprises the steps of generating plasma between a target electrode holding a target material provided in a vacuum container and a substrate electrode holding a deposited film forming substrate, provided opposingly to the target electrode, by the use of a high-frequency energy to cause the target material to undergo sputtering, and applying a bias voltage to at least one of the target electrode and the substrate electrode to form an Si film comprised of atoms deposited by sputtering on the substrate, wherein;
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Feng, G., et al., "Silicon Epitaxy at 230.degree. C. by Reactive DC Magnetron Sputtering and its in Situ Ellipsometry Monitoring", Appl. Phys. Ltrs., 59, 330-332 (1991).
Abraham Fetsum
Canon Kabushiki Kaisha
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