Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure
Reexamination Certificate
2008-03-18
2008-03-18
Nguyen, Tuan H. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
C257S098000
Reexamination Certificate
active
07345311
ABSTRACT:
A semiconductor substrate comprises a semiconductor layer comprising a group III nitride as a main component. A scattering portion for scattering an incident beam of light incident on one plane of the semiconductor layer is provided on another plane or inside of the semiconductor layer.
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Korean Office Action dated Apr. 19, 2007.
Richard C. Jaeger, “Introduction to Microelectronic Fabrication”, vol. 5, Addision Wesley Longman, Chapter 2, Lithography, pp. 13-26 (1993).
Ishida Masahiro
Mannoh Masaya
Ogawa Masahiro
Yuri Masaaki
Matsushita Electric - Industrial Co., Ltd.
Nguyen Tuan H.
Nixon & Peabody LLP
Studebaker Donald R.
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