Semiconductor substrate, method for fabricating the same,...

Details Semiconductor substrate, method for fabricating the same,... Semiconductor substrate, method for fabricating the same,...

2006-09-05

2006-09-05

Le, Thao X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

C257S620000, C257SE23179, C451S044000

Reexamination Certificate

active

07102206

ABSTRACT:
In a semiconductor substrate having a notch in an edge portion thereof, each of the two shoulder portions of the notch is configured as an arc and the difference in curvature between the two shoulder portions of the notch is not less than 0 mm and not more than 0.1 mm.

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