Semiconductor substrate manufacturing by recrystallization using

Details Semiconductor substrate manufacturing by recrystallization using Semiconductor substrate manufacturing by recrystallization using

1991-06-13

1992-12-22

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 62, 437173, 437963, 437936, 437907, 437902, H01L 2120, C30B 102

Patent

active

051734460

ABSTRACT:
A semiconductor substrate comprises a foundation, a semiconductor monocrystalline film formed on the foundation, and a high-melting-point metal film or a high-melting-point metal alloy film disposed in at least part of a region between the semiconductor monocrystalline film and the foundation. The high-melting-point metal film disposed below the semiconductor monocrystalline film can be utilized as a conductor in a semiconductor device.

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"Handbook of SOI-Structure-Forming Technology", pp. 239-249, published in 1987, Tokyo Japan.

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