Semiconductor substrate heater and reactor process and apparatus

Details Semiconductor substrate heater and reactor process and apparatus Semiconductor substrate heater and reactor process and apparatus

1988-09-29

1990-01-02

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437248, 219430, 219439, 219530, 118725, 148DIG71, H01L 2100, H01L 2102, C30B 104, C30B 2302

Patent

active

048913359

ABSTRACT:
A reaction system and process for uniformly heating semiconductor substrates and a device for supporting the same and direct conductive heating of IC wafers within a reactor are described. The substrate is held in direct contact with the heating source positioned within the reactor. The heat source is a thermal delivery module made of material such as solid silicon carbide, or high temperature material containing resistive heating elements. The heat is uniformly transferred to the walls of the module by a molten metal having a low melting point and high boiling point such as essentially indium or bismuth or a eutectic or indium and bismuth.

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