Semiconductor substrate having polysilicon layers and fabricatio

Details Semiconductor substrate having polysilicon layers and fabricatio Semiconductor substrate having polysilicon layers and fabricatio

1999-06-25

2000-04-04

Mulpuri, Savitri

Semiconductor device manufacturing: process

Gettering of substrate

438476, H01C 21324

Patent

active

060460954

ABSTRACT:
On the back side of a base body, three layers of polysilicon layer are formed. These polysilicon layers contain boron. A boron concentration C.sub.B(1), C.sub.B(2) and C.sub.B(3) of the first, second and third polysilicon layers from the base body side have a relationship of C.sub.B(1) .ltoreq.C.sub.B(2) .ltoreq.C.sub.B(3). On the other hand, between the polysilicon layers, silicon oxide layers are formed respectively. Upon fabrication of a semiconductor device, at first, a gettering heat treatment is effected for the substrate under a given condition. Thus, contaminating impurity is captured at the grain boundary of polysilicon layers formed on the back side of the base body. Next, the polysilicon formed at the most back side is removed by etching. By this, contaminated impurity is removed from the semiconductor substrate.

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