Semiconductor substrate having a thin film semiconductor layer b

Details Semiconductor substrate having a thin film semiconductor layer b Semiconductor substrate having a thin film semiconductor layer b

1993-08-13

1995-10-17

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

359 74, 359 79, 257 72, 257506, H01L 2314, H01L 2315, G02F 1136

Patent

active

054593352

ABSTRACT:
A thin film semiconductor substrate for a display device includes a thin film semiconductor circuit layer formed on a single crystal semiconductor substrate and a support substrate formed over the thin film semiconductor circuit layer. An adhesive layer made of a fluorine-containing epoxy family adhesive is provided between the insulating layer and the support substrate. When the single crystal semiconductor substrate is removed, the yield rate in production of the thin film semiconductor substrate is greatly improved.

REFERENCES:
patent: 4888364 (1989-12-01), Lai et al.
patent: 5034801 (1991-07-01), Fischer
patent: 5121190 (1992-06-01), Hsiao et al.

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