Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1991-07-02
1993-01-12
Hille, Rolf
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
427 62, 427 63, 257 33, 257 35, H01B 1200, H01L 3922, B05D 512
Patent
active
051790700
ABSTRACT:
A semiconductor substrate such as silicon single crystal having a thin film of a superconducting material composed of a compound oxide whose critical temperature is higher than 30 K such as Ln.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (Ln is Y or lanthanide), characterized in that a buffer layer composed of ZrO.sub.2, MgO containing or not containing metal element such as Ag is interposed between the semiconductor substrate and the superconducting thin film.
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"Microprobe Characterization of Sputtered High-7C Superconducting Films on Si and SiT103", LEE et al., American Vacuum Society, 34th National Symposium Final Report, Nov. 1987, Abstracts, p. 266.
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Fujimori Naoji
Harada Keizo
Itozaki Hideo
Jodai Tetsuji
Yazu Shuji
Bierman Jordan B.
Hille Rolf
Saadat Mahshid
Sumitomo Electric Industries Ltd.
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