Semiconductor substrate having a superconducting thin film

Details Semiconductor substrate having a superconducting thin film Semiconductor substrate having a superconducting thin film

1992-11-06

1995-03-28

Wyszomierski, George

Superconductor technology: apparatus, material, process

High temperature devices, systems, apparatus, com- ponents,...

Superconductor layer and one semiconducting or silicon layer

428446, 428632, 428930, 148 333, H01L 3912

Patent

active

054017157

ABSTRACT:
A semiconductor substrate having a silicon substrate and a superconducting thin film layer composed of compound oxide such as Ln.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (Ln is lanthanide) and stratified on the silicon substrate, characterized in that an intermediate semiconductor layer composed of compound semiconductor material such as GaAs is interposed between the silicon substrate and the superconducting thin film layer.

REFERENCES:
patent: 5084438 (1992-01-01), Matsubara et al.
patent: 5126315 (1992-06-01), Nishino et al.
patent: 5132280 (1992-07-01), Fiory et al.
patent: 5132282 (1992-07-01), Newman et al.
patent: 5212150 (1993-05-01), Yamazaki
patent: 5221660 (1993-06-01), Itozaki et al.

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