Semiconductor substrate having a superconducting thin film

Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Tunneling through region of reduced conductivity

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257 35, 257 39, 505191, 505237, H01L 2906

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059106620

ABSTRACT:
A semiconductor substrate comprising a single crystal substrate base such a silicon and a superconducting thin film layer deposited on said substrate base and composed of compound oxide such as Ln.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta.. (Ln is lanthanide).

REFERENCES:
patent: 4837609 (1989-06-01), Gurvitch et al.
patent: 4892861 (1990-01-01), Ray
patent: 4931424 (1990-06-01), Henty
Tarascon et al, "3-D Metal Doping (Fe, Co, Ni, Zn) of the High-Tc Perovskite YBa.sub.2 Cu.sup.3 O.sub.7-y ".
High Temperature Superconductors Symposium, Materias Research Society, Nov. 30-Dec. 4, 1987, pp. 523-526.
"Preparation of Y Ba.sub.2 Cu.sub.3 O.sub.7-x Superconducting Thin Films by RF-Magne Tron Sputtering", Aida et al, Jap J. Appl. Phys., vol. 30, #9, Sep. 1987, pp. L1489-L11491.
"Microprobe Characterization of Sputtered High TC Superconducting Films on Si and Si TiO.sub.2 ", Lee et al, American Vacuum Society, 34th National Symposium, Nov. 1987.
"High Temperature Superconductivity in Y-Ba-Cu-O: Identification of a Copper-Rich Superconducting Phase", Stacy et al, J. Am. Chem. Soc. vol. 109, #8, Apr. 1987, pp. 2528-2530.
"Growth of High TC Superconducting Bi.sub.4 (Ca,Sr).sub.6 Cu.sub.4 O.sub.16+x Crystals", Morris et al. Appl. Phys. Lett, vol. 53, #3, Jul. 1988, pp. 249-251.
Applied Physics Letters, vol. 51, No. 13, Sep. 28, 1987 Preparation and substrate reactions of superconducting Y-Ba-Cu-O films.
Japanese Journal of Applied Physics, vol. 26, No. 9, Sep. 9, 1987; Preparation of YBa.sub.2 Cu.sub.3 -O.sub.7-x Superconducting Thin Films by RF-Magnetron Sputtering.

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