Semiconductor substrate having a superconducting thin film

Details Semiconductor substrate having a superconducting thin film Semiconductor substrate having a superconducting thin film

1992-03-25

1993-06-22

Wyszomierski, George

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

428620, 428446, 505701, 505706, H01L 3912

Patent

active

052216608

ABSTRACT:
A semiconductor substrate having a silicon substrate and a superconducting thin film layer composed of compound oxide such as Ln.sub.1 Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (Ln is lanthanide) and stratified on the silicon substrate, characterized in that an intermediate semiconductor layer composed of compound semiconductor material such as GaAs is interposed between the silicon substrate and the superconducting thin film layer.

REFERENCES:
patent: 4395813 (1983-08-01), Roth et al.
patent: 4837609 (1989-06-01), Gurvitch et al.
patent: 5084437 (1992-01-01), Talvacchio
patent: 5084438 (1992-01-01), Matsubara et al.
Kwon et al. "Superconductors as Very High-Speed System Level Intercurrents" IEEE Electron Device Letters, vol. EDL-8, No. 12, Dec. 12, 1987.
Biegel et al. "Use of High-Temperature Superconductors in High Speed" Mat. Res. Soc Symposium proceed, vol. 99 Dec. 4, 1987, pp. 873-876.

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