Semiconductor substrate having a stepped profile

Details Semiconductor substrate having a stepped profile Semiconductor substrate having a stepped profile

2007-07-17

2007-07-17

Nadav, Ori (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

Mesa structure

C257S347000, C257S618000, C257S626000

Reexamination Certificate

active

10143015

ABSTRACT:
A semiconductor substrate which effectively prevents a chipping phenomenon, wherein the outer peripheral extremity of the insulation layer is located between the outer peripheral extremity of the semiconductor layer and the outer peripheral extremity of the support member, and wherein the semiconductor layer and the insulation layer produce a stepped profile.

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Notification of the First Office Action, Patent Office of PRC Feb. 21, 2003.

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