Fishing – trapping – and vermin destroying
Patent
1993-03-08
1994-03-29
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 62, 437974, 148DIG12, 148DIG135, H01L 2176
Patent
active
052984494
ABSTRACT:
The invention provides a silicon-on-insulator semiconductor substrate structure and a method of fabricating the same. The structure includes a base silicon substrate, a mono-crystalline silicon film formed on the base silicon substrate in a predetermined region, a poly-crystalline silicon film formed on the base silicon substrate in opposite region to the predetermined region, an insulator film formed on the polycrystalline silicon film, and a mono-crystalline silicon layer overlaying both the insulator film and the mono-crystalline silicon film so that the mono-crystalline silicon layer is electrically connected to the base silicon substrate through the mono-crystalline silicon film. The mono-crystalline silicon film permits not the mono-crystalline silicon layer only but also the base silicon substrate to serve as active regions.
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patent: 4808546 (1989-02-01), Moniwa et al.
patent: 4874718 (1989-10-01), Inoue
patent: 4963505 (1990-10-01), Fujii et al.
patent: 5091330 (1992-02-01), Cambou et al.
patent: 5238865 (1993-08-01), Eguchi
"Silicon Wafer-Bonding Process Technology for Soi Structures", By T. Abe et al., pp. 61-71.
Dang Trung
Hearn Brian E.
NEC Corporation
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