Metal treatment – Barrier layer stock material – p-n type – With contiguous layers of different semiconductive material
Reexamination Certificate
2006-06-20
2006-06-20
Kielin, Erik (Department: 2813)
Metal treatment
Barrier layer stock material, p-n type
With contiguous layers of different semiconductive material
C148S033200, C257S627000, C438S503000, C438S504000
Reexamination Certificate
active
07063751
ABSTRACT:
A trench is formed in a semiconductor substrate through a mask composed of a silicon oxide film formed on the semiconductor substrate. Then, an edge portion at an opening portion of the mask is etched so that the width of the mask opening width is greater than the width of the trench. After that, the inner surface of the trench is smoothed by thermal treatment around at 1000° C. in non-oxidizing or non-nitriding atmosphere under low pressure. Then, the trench is filled with an epitaxial film. After that, the epitaxial film is polished to complete the substrate.
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Tsuji Nobuhiro
Urakami Yasushi
Yamaguchi Hitoshi
Yamauchi Shoichi
Denso Corporation
Kielin Erik
Posz Law Group , PLC
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