Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2007-09-07
2011-11-22
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S613000, C257SE31003, C438S471000, C438S087000
Reexamination Certificate
active
08063466
ABSTRACT:
There is provided a semiconductor substrate for solid-state image sensing device in which the production cost is lower than that of a gettering method through a carbon ion implantation and problems such as occurrence of particles at a device production step and the like are solved.Silicon substrate contains solid-soluted carbon having a concentration of 1×1016-1×1017atoms/cm3and solid-soluted oxygen having a concentration of 1.4×1018-1.6×1018atoms/cm3.
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Japanese Office Action dated Jun. 15, 2010, Issued in Corresponding Japanese Patent Application 2007-551507.
Taiwanese Office Action corresponding to Application No. 96133524, dated May 6, 2011.
Dickey Thomas L
Erdem Fazli
Sughrue & Mion, PLLC
Sumco Corporation
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