Semiconductor substrate for solid-state image sensing device...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation

Reexamination Certificate

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C257S613000, C257SE31003, C438S471000, C438S087000

Reexamination Certificate

active

08063466

ABSTRACT:
There is provided a semiconductor substrate for solid-state image sensing device in which the production cost is lower than that of a gettering method through a carbon ion implantation and problems such as occurrence of particles at a device production step and the like are solved.Silicon substrate contains solid-soluted carbon having a concentration of 1×1016-1×1017atoms/cm3and solid-soluted oxygen having a concentration of 1.4×1018-1.6×1018atoms/cm3.

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patent: 2003/0170928 (2003-09-01), Shimozono et al.
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patent: WO2004008521 (2004-01-01), None
patent: WO 2005/038899 (2005-04-01), None
patent: 2006/025409 (2006-03-01), None
patent: WO 2006/025409 (2006-03-01), None
Japanese Office Action dated Jun. 15, 2010, Issued in Corresponding Japanese Patent Application 2007-551507.
Taiwanese Office Action corresponding to Application No. 96133524, dated May 6, 2011.

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