Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material forms active...
Patent
1993-01-28
1995-03-14
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material forms active...
257523, 257524, 257777, 257 74, 257913, 437 10, 437233, H01L 2904, H01L 2702, H01L 2712, H01L 2348
Patent
active
053979036
ABSTRACT:
Disclosed is a semiconductor device fabrication substrate having a getter site formed directly below the device fabrication region to allow gettering near the device fabrication region. A polycrystalline Si layer is deposited on the mirror-finished surface of a first monocrystalline Si wafer by vapor phase epitaxy. Then, the mirror-finished surface of a second monocrystalline Si wafer is brought into contact with the surface of the polycrystalline Si layer and are laminated with each other by heat treatment. Then, the top surface of the second monocrystalline Si wafer is subjected to grinding and mirror-finishing, so that the range from the mirror-finished surface to the polycrystalline Si layer may be on the order of several .mu.m to several tens of .mu.m. The resultant substrate has a getter layer (polycrystalline Si layer) directly below the device fabrication region.
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Arroyo Teresa M.
Crane Sara W.
NEC Corporation
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