Semiconductor substrate for bipolar element

Details Semiconductor substrate for bipolar element Semiconductor substrate for bipolar element

1994-03-18

1995-05-30

Breneman, R. Bruce

Metal treatment

Barrier layer stock material, p-n type

Having at least three contiguous layers of semiconductive...

437 11, 437 12, 437 13, 437 10, H01L 21306

Patent

active

054197864

ABSTRACT:
A semiconductor substrate allowing reduction of crystal defects in a device formation region of an epitaxial silicon layer and allowing control of the amount of internal precipitation defects of the single crystal silicon substrate, a method of manufacturing such semiconductor substrate, and a semiconductor device utilizing such semiconductor substrate are disclosed. The semiconductor substrate includes a single crystal silicon substrate, an epitaxial silicon layer, and a polycrystalline silicon layer. The interstitial oxygen concentration of the single crystal silicon substrate is set within the range of 12.5-14.0.times.10.sup.17 (atoms/cm3) according to the old ASTM specification. The epitaxial silicon layer is formed on the top surface of the single crystal silicon substrate. The polycrystalline silicon layer is formed at least on the rear surface of the single crystal silicon substrate to a thickness of at least 1 .mu.m.

REFERENCES:
patent: 4053335 (1977-10-01), Hu
patent: 5110404 (1992-05-01), Fusegawa et al.
patent: 5327007 (1994-07-01), Imura et al.
Semiconductor Silicon Crystal Technology, Academic Press, pp.128-131, 1989, Fumio Shimura.
Semiconductor Silicon Crystal Technology, Academic Press, pp. 60-63 and 286-289, 1989, Fumio Shimura.

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