Semiconductor substrate dry cleaning method

Details Semiconductor substrate dry cleaning method Semiconductor substrate dry cleaning method

1995-09-18

1998-01-06

Warden, Jill

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

134 26, 134 30, B08B 500

Patent

active

057049866

ABSTRACT:
A method for cleaning a semiconductor substrate. Introduced into a semiconductor substrate processing chamber is a semiconductor substrate. The semiconductor substrate and the semiconductor substrate processing chamber are maintained at a temperature not exceeding about 800 degrees centigrade. Introduced substantially simultaneously with the semiconductor substrate into the semiconductor substrate processing chamber is a low flow of a first oxidant gas. Introduced into the semiconductor substrate processing chamber immediately subsequent to the low flow of the first oxidant gas is a high flow of a second oxidant gas. Introduced into the semiconductor wafer processing chamber no earlier than the high flow of the second oxidant gas is a flow of a chlorine containing getter material. The semiconductor substrate is exposed to the high flow of the second oxidant gas and the flow of the chlorine containing getter material at a temperature not exceeding 800 degrees centigrade for a time period sufficient to remove organic contaminant residues and metal ion contaminant residues from the surface of the semiconductor substrate.

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