Semiconductor substrate comprising a support substrate which...

Details Semiconductor substrate comprising a support substrate which... Semiconductor substrate comprising a support substrate which...

2007-03-20

2007-03-20

Wilczewski, M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

C257SE21318

Reexamination Certificate

active

11002995

ABSTRACT:
A semiconductor substrate includes a support substrate1has gettering sites10for gettering impurity metal, an embedded insulating film2which is provided on the support substrate1and contains oxides of an element whose single bond energy to oxygen is higher than that to silicon, and a semiconductor layer (an SOI layer)3provided on the embedded insulating film2.

REFERENCES:
patent: 6083324 (2000-07-01), Henley et al.
patent: 6376336 (2002-04-01), Buynoski
patent: 6639327 (2003-10-01), Momoi et al.
patent: 6806146 (2004-10-01), Brask et al.
patent: 2003/0027406 (2003-02-01), Malone
patent: 2005/0124109 (2005-06-01), Quevedo-Lopez et al.
patent: 2002-134721 (2002-05-01), None
patent: 2002-359247 (2002-12-01), None

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