Semiconductor substrate bias circuit

Details Semiconductor substrate bias circuit Semiconductor substrate bias circuit

1981-05-13

1984-02-07

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307297, 307304, H03K 301, H03K 3353

Patent

active

044305818

ABSTRACT:
A semiconductor circuit consisting of a dynamic-type circuit and a bias-voltage generating circuit. The bias-voltage generating circuit is comprised of a first bias-voltage generator and a second bias-voltage generator. The first generator absorbs a variable substrate current, the magnitude of which is proportional to the operating frequency of the dynamic-type circuit, while the second generator absorbs a substrate current, the magnitude of which is not proportional to the operating frequency of the dynamic-type circuit. Alternately, both portions of the substrate current may be absorbed via the same circuitry.

REFERENCES:
patent: 3806741 (1974-04-01), Smith
patent: 4142114 (1979-02-01), Green
patent: 4229667 (1980-10-01), Heimbigner et al.
patent: 4266151 (1981-05-01), Hoffman et al.
patent: 4356412 (1982-10-01), Moench et al.

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