Semiconductor substrate and thin processing method for...

Details Semiconductor substrate and thin processing method for... Semiconductor substrate and thin processing method for...

2007-08-14

2007-08-14

Pham, Hoai (Department: 2814)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C438S692000, C257SE21237

Reexamination Certificate

active

11120108

ABSTRACT:
A semiconductor substrate having a first substrate surface which includes a device area in which semiconductor devices are formed and a substrate peripheral portion which does not overlap with the device area. A concavo-convex portion is formed in the substrate peripheral portion. Preferably, a concavo-convex portion is formed in a side portion which adjoins the peripheral portion. The concavo-convex portion formed in the substrate peripheral portion or the side portion may be formed by a method such as dry etching, wet etching, mechanical grinding, electrolytic plating, nonelectrolytic plating, or patterning using one of a resin material and a metal material. A thin processing method includes forming the device area; forming the concavo-convex portion in the substrate peripheral portion; adhering the first substrate surface to a support; and grinding a second substrate surface of the semiconductor substrate, which is opposite with the first substrate surface.

REFERENCES:
patent: 7129172 (2006-10-01), Morrow et al.
patent: 07-045568 (1995-02-01), None
patent: 2003-059878 (2003-02-01), None

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