Semiconductor substrate and semiconductor device using the same

Details Semiconductor substrate and semiconductor device using the same Semiconductor substrate and semiconductor device using the same

2007-04-03

2007-04-03

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

C257S341000, C257SE29107, C257SE29198

Reexamination Certificate

active

10999229

ABSTRACT:
A semiconductor substrate used for fabricating vertical devices, such as vertical MOSFET, capable of maintaining low ON-stage resistance and of ensuring a necessary level of OFF-stage breakdown voltage is provided. A heavily-doped arsenic layer of 0.5 to 3.0 μm thick is inserted between a heavily-doped phosphorus layer 11 composing the drain of a vertical MOSFET and an n−-type drift layer. The heavily-doped arsenic layer functions as a barrier layer which prevents phosphorus from diffusing from the heavily-doped phosphorus layer into the n−-type drift layer. This is successful in maintaining spreading of the depletion layer during OFF time of the vertical MOSFET to thereby improve the OFF-stage breakdown voltage, and in maintaining the low ON-stage resistance.

REFERENCES:
patent: 4972239 (1990-11-01), Mihara
patent: 6271061 (2001-08-01), Frisina et al.
patent: 6384431 (2002-05-01), Takahashi et al.
patent: 6774407 (2004-08-01), Kushida
patent: 2001-7149 (2001-01-01), None
patent: WO 96/32749 (1996-10-01), None

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