Semiconductor substrate and semiconductor device and...

Details Semiconductor substrate and semiconductor device and... Semiconductor substrate and semiconductor device and...

2011-08-09

2011-08-09

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S149000, C438S164000, C438S166000, C438S455000, C438S459000

Reexamination Certificate

active

07994022

ABSTRACT:
A semiconductor substrate having an SOI layer is provided. Between an SOI layer and a glass substrate, a bonding layer is provided which is formed of one layer or a plurality of layers of phosphosilicate glass, borosilicate glass, and/or borophosphosilicate glass, using organosilane as one material by a thermal CVD method at a temperature of 500° C. to 800° C.

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