Semiconductor substrate and semiconductor device

Details Semiconductor substrate and semiconductor device Semiconductor substrate and semiconductor device

2011-07-12

2011-07-12

Fahmy, Wael M (Department: 2814)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C438S534000, C257S077000, C257SE21064

Reexamination Certificate

active

07977210

ABSTRACT:
A semiconductor substrate includes a silicon carbide substrate having a first impurity concentration, a first silicon carbide layer formed on the silicon carbide substrate and having a second impurity concentration, and a second silicon carbide layer of a first conductivity type formed on the first silicon carbide layer and having a third impurity concentration, wherein the second impurity concentration is higher the an either the first impurity concentration or the third impurity concentration.

REFERENCES:
patent: 5027168 (1991-06-01), Edmond
patent: 7468314 (2008-12-01), Shenoy et al.
patent: 2007/0066039 (2007-03-01), Agarwal et al.
patent: 2007/0138482 (2007-06-01), Tanimoto
patent: 2008/0197360 (2008-08-01), Sriram et al.
patent: 2003-86816 (2003-03-01), None

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