Semiconductor substrate and process for preparing the same

Details Semiconductor substrate and process for preparing the same Semiconductor substrate and process for preparing the same

1995-01-04

1997-10-21

Speer, Timothy

Stock material or miscellaneous articles

Composite

Of inorganic material

428699, 428700, 428701, 428702, 4283044, 4283122, 428446, B32B 1500

Patent

active

056794754

ABSTRACT:
A process for preparing a semiconductor substrate comprises a step of porousifying a silicon monocrystalline substrate to form a porous layer, a step of making a silicon monocrystalline thin film to epitaxially grow on a surface of the porous layer, a step of oxidizing the surface of the epitaxial growth layer, a step of forming a deposited film on the oxidized surface, thereby obtaining a first substrate, a step of closely contacting the deposited film of the first substrate to a second substrate, a step of heat treating the closely contacted substrates and a step of selectively etching the porous layer.

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patent: 5371037 (1994-12-01), Yoechara
patent: 5374581 (1994-12-01), Ichikawa et al.
patent: 5405802 (1995-04-01), Yamagata et al.

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