Semiconductor substrate and method of treating semiconductor sub

Details Semiconductor substrate and method of treating semiconductor sub Semiconductor substrate and method of treating semiconductor sub

1998-09-01

2000-01-04

Speer, Timothy

Stock material or miscellaneous articles

Composite

Of inorganic material

428432, 428450, 257410, B32B 900, H01L 2976

Patent

active

060107979

ABSTRACT:
A method of treating a semiconductor substrate, which comprises the steps of subjecting a surface of the semiconductor substrate to an annealing treatment, performing an etching treatment of the surface of the semiconductor substrate under a condition where the semiconductor substrate is substantially prevented from being etched and a precipitate exposed from the surface of the semiconductor substrate is selectively etched away, and forming a monocrystalline film of a semiconductor material constituting the semiconductor substrate on the surface of the semiconductor substrate.

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Akihiro Miyauchi, et al., "Low-Temperature (900.degree. C) Si Epitaxial Growth on Si (100) after HF Treatment", J. Electrochem. Soc., vol. 137, No. 10, pp. 3257-3260, Oct., 1990.

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