Semiconductor substrate and method of manufacturing same

Details Semiconductor substrate and method of manufacturing same Semiconductor substrate and method of manufacturing same

1997-02-11

1999-12-28

Bowers, Charles

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

438508, 438495, H01L 2130

Patent

active

060081104

ABSTRACT:
A semiconductor substrate has a support substrate formed of monocrystal silicon, an oxide film formed on the support substrate and a thin film of monocrystal silicon formed on the oxide film. The support substrate is a high-concentration P-type substrate to which boron is so doped that a resistivity of the support base is 0.1 .OMEGA..cm or less. In manufacturing: boron is into the support base so that a resistivity of the support base is 0.1 .OMEGA..cm or less; a silicon substrate on which the thin film of monocrystal silicon is formed is heated at 1100.degree. C. or higher for 30 min or longer within a reducing atmosphere; the heat treated silicon substrate is attached to the high-concentration P-type support substrate via the oxide film formed on a surface of any one of the support substrate and the P-type silicon substrate and the attached substrates are heated at 950.degree. C. or higher for 10 min or longer to bond the attached substrates together; and the bonded silicon substrate is thinned.

REFERENCES:
patent: 4851078 (1989-07-01), Short et al.
patent: 5453394 (1995-09-01), Yonehara et al.
patent: 5476819 (1995-12-01), Warren
patent: 5565690 (1996-10-01), Theodore et al.
patent: 5650354 (1997-07-01), Himi et al.
patent: 5670411 (1997-09-01), Yonehara et al.

Affiliated with

Also associated with

Rating

Semiconductor substrate and method of manufacturing same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor substrate and method of manufacturing same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor substrate and method of manufacturing same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2381884